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005     20200423204316.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.2140076
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024 7 _ |a WOS:000233825900070
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024 7 _ |a 2128/1024
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037 _ _ |a PreJuSER-50489
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Schorn, J.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Monte Carlo simulations of imprint behavior in ferroelectrics
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 242902
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 87
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In this letter, Monte Carlo simulation methods were used to investigate the influence of the defect orientation and concentration on the hysteresis loop in ferroelectric thin films. The hysteresis loops were calculated by an existing Monte Carlo model. For a certain type of defect orientation, the simulations revealed an asymmetric hysteresis loop behavior, similar to hysteresis curves recorded by imprint measurements. Though these results may not directly offer a new explanation for the imprint mechanism in ferroelectric thin films, they still provide insight information about the often observed phenomenon of imprinted hysteresis loops of as-prepared thin-film capacitors.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Böttger, U.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.2140076
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856 7 _ |u http://dx.doi.org/10.1063/1.2140076
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