000050923 001__ 50923
000050923 005__ 20190625110508.0
000050923 0247_ $$2pmid$$apmid:16565712
000050923 0247_ $$2DOI$$a10.1038/nmat1614
000050923 0247_ $$2WOS$$aWOS:000236530400023
000050923 0247_ $$2altmetric$$aaltmetric:21815066
000050923 037__ $$aPreJuSER-50923
000050923 041__ $$aeng
000050923 082__ $$a610
000050923 084__ $$2WoS$$aChemistry, Physical
000050923 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000050923 084__ $$2WoS$$aPhysics, Applied
000050923 084__ $$2WoS$$aPhysics, Condensed Matter
000050923 1001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b0$$uFZJ
000050923 245__ $$aSwitching the electrical resistance of individual dislocations in single-crystalline SrTiO3
000050923 260__ $$aBasingstoke$$bNature Publishing Group$$c2006
000050923 300__ $$a312
000050923 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000050923 3367_ $$2DataCite$$aOutput Types/Journal article
000050923 3367_ $$00$$2EndNote$$aJournal Article
000050923 3367_ $$2BibTeX$$aARTICLE
000050923 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000050923 3367_ $$2DRIVER$$aarticle
000050923 440_0 $$011903$$aNature Materials$$v5$$x1476-1122$$y4
000050923 500__ $$aRecord converted from VDB: 12.11.2012
000050923 520__ $$aThe great variability in the electrical properties of multinary oxide materials, ranging from insulating, through semiconducting to metallic behaviour, has given rise to the idea of modulating the electronic properties on a nanometre scale for high-density electronic memory devices. A particularly promising aspect seems to be the ability of perovskites to provide bistable switching of the conductance between non-metallic and metallic behaviour by the application of an appropriate electric field. Here we demonstrate that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO(3). The phenomenon is shown to originate from local modulations of the oxygen content and to be related to the self-doping capability of the early transition metal oxides. Our results show that extended defects, such as dislocations, can act as bistable nanowires and hold technological promise for terabit memory devices.
000050923 536__ $$0G:(DE-Juel1)FUEK414$$2G:(DE-HGF)$$aKondensierte Materie$$cP54$$x0
000050923 588__ $$aDataset connected to Web of Science, Pubmed
000050923 650_2 $$2MeSH$$aAluminum Oxide: chemistry
000050923 650_2 $$2MeSH$$aCrystallization
000050923 650_2 $$2MeSH$$aElectric Conductivity
000050923 650_2 $$2MeSH$$aElectric Impedance
000050923 650_2 $$2MeSH$$aElectromagnetic Fields
000050923 650_2 $$2MeSH$$aElectronics
000050923 650_2 $$2MeSH$$aMetals: chemistry
000050923 650_2 $$2MeSH$$aMicroscopy, Atomic Force
000050923 650_2 $$2MeSH$$aNanotechnology: methods
000050923 650_2 $$2MeSH$$aOxides: chemistry
000050923 650_2 $$2MeSH$$aOxygen: chemistry
000050923 650_2 $$2MeSH$$aStrontium: chemistry
000050923 650_2 $$2MeSH$$aSurface Properties
000050923 650_2 $$2MeSH$$aTemperature
000050923 650_2 $$2MeSH$$aTitanium: chemistry
000050923 650_7 $$00$$2NLM Chemicals$$aMetals
000050923 650_7 $$00$$2NLM Chemicals$$aOxides
000050923 650_7 $$012060-59-2$$2NLM Chemicals$$astrontium titanium oxide
000050923 650_7 $$01344-28-1$$2NLM Chemicals$$aAluminum Oxide
000050923 650_7 $$07440-24-6$$2NLM Chemicals$$aStrontium
000050923 650_7 $$07440-32-6$$2NLM Chemicals$$aTitanium
000050923 650_7 $$07782-44-7$$2NLM Chemicals$$aOxygen
000050923 650_7 $$2WoSType$$aJ
000050923 7001_ $$0P:(DE-Juel1)125382$$aSpeier, W.$$b1$$uFZJ
000050923 7001_ $$0P:(DE-Juel1)130545$$aBihlmayer, G.$$b2$$uFZJ
000050923 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000050923 773__ $$0PERI:(DE-600)2088679-2$$a10.1038/nmat1614$$gVol. 5, p. 312$$p312$$q5<312$$tNature materials$$v5$$x1476-1122$$y2006
000050923 8567_ $$uhttp://dx.doi.org/10.1038/nmat1614
000050923 909CO $$ooai:juser.fz-juelich.de:50923$$pVDB
000050923 9131_ $$0G:(DE-Juel1)FUEK414$$bMaterie$$kP54$$lKondensierte Materie$$vKondensierte Materie$$x0$$zentfällt   bis 2009
000050923 9141_ $$y2006
000050923 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000050923 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x1
000050923 9201_ $$0I:(DE-Juel1)VDB30$$d31.12.2006$$gIFF$$kIFF-TH-I$$lTheorie I$$x0
000050923 9201_ $$0I:(DE-Juel1)VDB71$$d31.12.2006$$gWTP$$kWTP$$lWissenschaftlich-Technische Planung$$x2
000050923 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x3
000050923 970__ $$aVDB:(DE-Juel1)79776
000050923 980__ $$aVDB
000050923 980__ $$aConvertedRecord
000050923 980__ $$ajournal
000050923 980__ $$aI:(DE-Juel1)PGI-7-20110106
000050923 980__ $$aI:(DE-Juel1)PGI-1-20110106
000050923 980__ $$aI:(DE-Juel1)FS-20090406
000050923 980__ $$aI:(DE-82)080009_20140620
000050923 980__ $$aUNRESTRICTED
000050923 981__ $$aI:(DE-Juel1)PGI-7-20110106
000050923 981__ $$aI:(DE-Juel1)PGI-1-20110106
000050923 981__ $$aI:(DE-Juel1)FS-20090406
000050923 981__ $$aI:(DE-Juel1)VDB881