Hauptseite > Publikationsdatenbank > New Growth Mode through Decorated Twin Boundaries > print

001     50976
005     20200423204324.0
017 _ _ |a This version is available at the following Publisher URL: http://prl.aps.org
024 7 _ |a 10.1103/PhysRevLett.96.115503
|2 DOI
024 7 _ |a WOS:000236249900041
|2 WOS
024 7 _ |a 2128/2169
|2 Handle
037 _ _ |a PreJuSER-50976
041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |a Bleikamp, S.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a New Growth Mode through Decorated Twin Boundaries
260 _ _ |a College Park, Md.
|b APS
|c 2006
300 _ _ |a 115503
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 96
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Scanning tunneling microscopy and low energy electron diffraction were used to investigate the growth of partly twinned Ir thin films on Ir(111). A transition from the expected layer-by-layer to a defect dominated growth mode with a fixed lateral length scale and increasing roughness is observed. During growth, the majority of the film is stably transformed to twinned stacking. This transition is initiated by the energetic avoidance of the formation of intrinsic stacking faults compared to two independent twin faults. The atomistic details of the defect kinetics are outlined.
536 _ _ |a Grundlagen für zukünftige Informationstechnologien
|c P42
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK412
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Thoma, A.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Polop, C.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB19523
700 1 _ |a Pirug, G.
|b 3
|u FZJ
|0 P:(DE-Juel1)128784
700 1 _ |a Linke, U.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB23435
700 1 _ |a Michely, T.
|b 5
|0 P:(DE-HGF)0
773 _ _ |a 10.1103/PhysRevLett.96.115503
|g Vol. 96, p. 115503
|p 115503
|q 96<115503
|0 PERI:(DE-600)1472655-5
|t Physical review letters
|v 96
|y 2006
|x 0031-9007
856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.96.115503
|u http://hdl.handle.net/2128/2169
856 4 _ |u https://juser.fz-juelich.de/record/50976/files/79875.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/50976/files/79875.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/50976/files/79875.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/50976/files/79875.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:50976
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
913 1 _ |k P42
|v Grundlagen für zukünftige Informationstechnologien
|l Grundlagen für zukünftige Informationstechnologien (FIT)
|b Schlüsseltechnologien
|0 G:(DE-Juel1)FUEK412
|x 0
914 1 _ |y 2006
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
915 _ _ |2 StatID
|0 StatID:(DE-HGF)0510
|a OpenAccess
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
970 _ _ |a VDB:(DE-Juel1)79875
980 _ _ |a VDB
980 _ _ |a JUWEL
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-3-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-3-20110106
981 _ _ |a I:(DE-Juel1)VDB381

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21