TY  - JOUR
AU  - Kronholz, S.
AU  - Karthäuser, S.
AU  - Meszaros, G.
AU  - Wandlowski, Th.
AU  - Van Der Hart, A.
AU  - Waser, R.
TI  - Protected Nanoelectrodes of two different Metals with 30 nm Gap-width and Access-window
JO  - Microelectronic engineering
VL  - 83
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-51341
SP  - 1702 - 1705
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Reproducible fabrication of 30 nm metallic nanogaps on silicon chips and their electrochemical characterization are presented. The fabrication of the chip is a combination of an optical lithography step and two electron-beam (e-beam) steps. An optimized adhesion layer/metal layer combination (Ti/Pt/Au) and an adopted two layer e-beam resist are used. Specifically the chip has been covered with different protection layers, access windows located on top of the nanogaps, calibration electrodes and contact pads, respectively. After characterization of the gaps and of the protection layer in 0.1 M H2SO4 aqueous electrolyte, the deposition of Cu onto the nanogaps was demonstrated successfully. (c) 2006 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000237581900261
DO  - DOI:10.1016/j.mee.2005.12.023
UR  - https://juser.fz-juelich.de/record/51341
ER  -