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@ARTICLE{Kronholz:51341,
      author       = {Kronholz, S. and Karthäuser, S. and Meszaros, G. and
                      Wandlowski, Th. and Van Der Hart, A. and Waser, R.},
      title        = {{P}rotected {N}anoelectrodes of two different {M}etals with
                      30 nm {G}ap-width and {A}ccess-window},
      journal      = {Microelectronic engineering},
      volume       = {83},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-51341},
      pages        = {1702 - 1705},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Reproducible fabrication of 30 nm metallic nanogaps on
                      silicon chips and their electrochemical characterization are
                      presented. The fabrication of the chip is a combination of
                      an optical lithography step and two electron-beam (e-beam)
                      steps. An optimized adhesion layer/metal layer combination
                      (Ti/Pt/Au) and an adopted two layer e-beam resist are used.
                      Specifically the chip has been covered with different
                      protection layers, access windows located on top of the
                      nanogaps, calibration electrodes and contact pads,
                      respectively. After characterization of the gaps and of the
                      protection layer in 0.1 M H2SO4 aqueous electrolyte, the
                      deposition of Cu onto the nanogaps was demonstrated
                      successfully. (c) 2006 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI / ISG-2 / ISG-3 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB42
                      / I:(DE-Juel1)VDB43 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology / Optics / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000237581900261},
      doi          = {10.1016/j.mee.2005.12.023},
      url          = {https://juser.fz-juelich.de/record/51341},
}