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| 001 | 51342 | ||
| 005 | 20230426083100.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://prb.aps.org |
| 024 | 7 | _ | |a 10.1103/PhysRevB.73.125413 |2 DOI |
| 024 | 7 | _ | |a WOS:000236467400110 |2 WOS |
| 024 | 7 | _ | |a 2128/1027 |2 Handle |
| 037 | _ | _ | |a PreJuSER-51342 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a He, J. Q. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Growth dynamics and strain relaxation mechanisms in BaTiO3 pulsed laser deposited on SrRuO3/SrTiO3 |
| 260 | _ | _ | |a College Park, Md. |b APS |c 2006 |
| 300 | _ | _ | |a 125413 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Physical Review B |x 1098-0121 |0 4919 |v 73 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The atomic structure of epitaxial BaTiO3 films grown on SrRuO3-covered (001)SrTiO3 substrates by pulsed laser deposition has been studied by transmission electron microscopy. It revealed a three-layered structure, each layer with a different morphology, remaining strain, and density of defects. These results pointed to the existence of two growth regimes with distinctive strain-relaxation mechanisms: (i) A first dislocation-free layer extending 3 nm from the coherent interface with SrRuO3. (ii) Beyond it, a second 7 nm thick semicoherent layer exhibiting a high density of misfit dislocations with a Burger vector a < 010 >. The structures of both layers are the outcome of a two-dimensional layer-by-layer growth regime. (iii) A third layer extending throughout the rest of the BaTiO3 film, showing a columnar structure of stoichiometric grains encapsulated by amorphous Ti-enriched boundaries, as disclosed by energy-dispersive x-ray spectroscopy. The structure of this third layer reflects its three-dimensional-featured growth habit. By considering both regimes as a single mode, the growth dynamics of the BaTiO3 films is discussed in relation to strain-relaxation mechanisms potentially responsible for the Stranski-Krastanov growth mode of this system. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 542 | _ | _ | |i 2006-03-20 |2 Crossref |u http://link.aps.org/licenses/aps-default-license |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Vasco, E. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Dittmann, R. |b 2 |u FZJ |0 P:(DE-Juel1)VDB5464 |
| 700 | 1 | _ | |a Wang, R. H. |b 3 |0 P:(DE-HGF)0 |
| 773 | 1 | 8 | |a 10.1103/physrevb.73.125413 |b American Physical Society (APS) |d 2006-03-20 |n 12 |p 125413 |3 journal-article |2 Crossref |t Physical Review B |v 73 |y 2006 |x 1098-0121 |
| 773 | _ | _ | |a 10.1103/PhysRevB.73.125413 |g Vol. 73, p. 125413 |p 125413 |n 12 |q 73<125413 |0 PERI:(DE-600)2844160-6 |t Physical review / B |v 73 |y 2006 |x 1098-0121 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1103/PhysRevB.73.125413 |u http://hdl.handle.net/2128/1027 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/51342/files/80541.pdf |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/51342/files/80541.jpg?subformat=icon-1440 |x icon-1440 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/51342/files/80541.jpg?subformat=icon-180 |x icon-180 |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/51342/files/80541.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
| 909 | C | O | |o oai:juser.fz-juelich.de:51342 |p openaire |p open_access |p driver |p VDB |p dnbdelivery |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |2 StatID |0 StatID:(DE-HGF)0510 |a OpenAccess |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)80541 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a JUWEL |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a FullTexts |
| 980 | 1 | _ | |a FullTexts |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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