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001     52209
005     20200423204341.0
017 _ _ |a This version is available at the following Publisher URL: http://prl.aps.org
024 7 _ |a 10.1103/PhysRevLett.96.016101
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024 7 _ |a WOS:000234608300055
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024 7 _ |a 2128/1446
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041 _ _ |a eng
082 _ _ |a 550
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|a Physics, Multidisciplinary
100 1 _ |a Caciuc, V.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Atomic-scale sharpening of silicon tips in non-contact atomic force microscopy
260 _ _ |a College Park, Md.
|b APS
|c 2006
300 _ _ |a 016101
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 96
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The atomic-scale stability of clean silicon tips used in noncontact atomic force microscopy (NC-AFM) is simulated by ab initio calculations based on density functional theory. The tip structures are modeled by silicon clusters with [111] and [001] termination. For the often assumed Si(111)-type tip we observe the sharpening of the initially blunt tip via short-range chemical forces during the first approach and retraction cycle. The structural changes corresponding to this intrinsic process are irreversible and lead to stable NC-AFM imaging conditions. In opposition to the picture used in literature, the Si(001)-type tip does not exhibit the so-called "two-dangling bond" feature as a bulklike termination suggests.
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700 1 _ |a Hölscher, H.
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700 1 _ |a Blügel, S.
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700 1 _ |a Fuchs, H.
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773 _ _ |a 10.1103/PhysRevLett.96.016101
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.96.016101
|u http://hdl.handle.net/2128/1446
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