000052315 001__ 52315
000052315 005__ 20200423204346.0
000052315 017__ $$aThis version is available at the following Publisher URL: http://apl.aip.org
000052315 0247_ $$2DOI$$a10.1063/1.2336626
000052315 0247_ $$2WOS$$aWOS:000240035400073
000052315 0247_ $$2Handle$$a2128/1028
000052315 037__ $$aPreJuSER-52315
000052315 041__ $$aeng
000052315 082__ $$a530
000052315 084__ $$2WoS$$aPhysics, Applied
000052315 1001_ $$0P:(DE-HGF)0$$aTakahasi, K.$$b0
000052315 245__ $$aThickness dependence of dielectric properties in bismuth layer-structured dielectrics
000052315 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2006
000052315 300__ $$a082901
000052315 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000052315 3367_ $$2DataCite$$aOutput Types/Journal article
000052315 3367_ $$00$$2EndNote$$aJournal Article
000052315 3367_ $$2BibTeX$$aARTICLE
000052315 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000052315 3367_ $$2DRIVER$$aarticle
000052315 440_0 $$0562$$aApplied Physics Letters$$v89$$x0003-6951
000052315 500__ $$aRecord converted from VDB: 12.11.2012
000052315 520__ $$ac-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films having natural superlattice structure were grown on (001)(c)SrRuO3 parallel to(001)SrTiO3 substrates by metal organic chemical vapor deposition. SrBi4Ti4O15 films suffer no degradation with a dielectric constant of 200 down to a film thickness of 15 nm, which corresponds to four unit cells. Temperature coefficients of capacitance were low enough despite their high dielectric constant. They exhibited stable capacitance and superior insulating properties against applied electric field, irrespective of film thickness. These results open the door to designable size-effect-free materials with high dielectric constant having bias- and temperature-independent characteristics together with superior electrical insulation for high-density capacitor applications. (c) 2006 American Institute of Physics.
000052315 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000052315 588__ $$aDataset connected to Web of Science
000052315 650_7 $$2WoSType$$aJ
000052315 7001_ $$0P:(DE-HGF)0$$aSuzuki, M.$$b1
000052315 7001_ $$0P:(DE-HGF)0$$aKojima, T.$$b2
000052315 7001_ $$0P:(DE-Juel1)VDB50077$$aWatanabe, T.$$b3$$uFZJ
000052315 7001_ $$0P:(DE-HGF)0$$aSakashita, Y.$$b4
000052315 7001_ $$0P:(DE-HGF)0$$aKato, K.$$b5
000052315 7001_ $$0P:(DE-HGF)0$$aSakata, O.$$b6
000052315 7001_ $$0P:(DE-HGF)0$$aSumitani, K.$$b7
000052315 7001_ $$0P:(DE-HGF)0$$aFunakubo, H.$$b8
000052315 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.2336626$$gVol. 89, p. 082901$$p082901$$q89<082901$$tApplied physics letters$$v89$$x0003-6951$$y2006
000052315 8567_ $$uhttp://hdl.handle.net/2128/1028$$uhttp://dx.doi.org/10.1063/1.2336626
000052315 8564_ $$uhttps://juser.fz-juelich.de/record/52315/files/82240.pdf$$yOpenAccess
000052315 8564_ $$uhttps://juser.fz-juelich.de/record/52315/files/82240.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000052315 8564_ $$uhttps://juser.fz-juelich.de/record/52315/files/82240.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000052315 8564_ $$uhttps://juser.fz-juelich.de/record/52315/files/82240.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000052315 909CO $$ooai:juser.fz-juelich.de:52315$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000052315 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000052315 9141_ $$y2006
000052315 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000052315 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000052315 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
000052315 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000052315 970__ $$aVDB:(DE-Juel1)82240
000052315 980__ $$aVDB
000052315 980__ $$aJUWEL
000052315 980__ $$aConvertedRecord
000052315 980__ $$ajournal
000052315 980__ $$aI:(DE-Juel1)PGI-7-20110106
000052315 980__ $$aI:(DE-Juel1)VDB381
000052315 980__ $$aUNRESTRICTED
000052315 980__ $$aFullTexts
000052315 9801_ $$aFullTexts
000052315 981__ $$aI:(DE-Juel1)PGI-7-20110106
000052315 981__ $$aI:(DE-Juel1)VDB381