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@ARTICLE{Takahasi:52315,
      author       = {Takahasi, K. and Suzuki, M. and Kojima, T. and Watanabe, T.
                      and Sakashita, Y. and Kato, K. and Sakata, O. and Sumitani,
                      K. and Funakubo, H.},
      title        = {{T}hickness dependence of dielectric properties in bismuth
                      layer-structured dielectrics},
      journal      = {Applied physics letters},
      volume       = {89},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-52315},
      pages        = {082901},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {c-axis-oriented epitaxial SrBi4Ti4O15 and CaBi4Ti4O15 films
                      having natural superlattice structure were grown on
                      (001)(c)SrRuO3 parallel to(001)SrTiO3 substrates by metal
                      organic chemical vapor deposition. SrBi4Ti4O15 films suffer
                      no degradation with a dielectric constant of 200 down to a
                      film thickness of 15 nm, which corresponds to four unit
                      cells. Temperature coefficients of capacitance were low
                      enough despite their high dielectric constant. They
                      exhibited stable capacitance and superior insulating
                      properties against applied electric field, irrespective of
                      film thickness. These results open the door to designable
                      size-effect-free materials with high dielectric constant
                      having bias- and temperature-independent characteristics
                      together with superior electrical insulation for
                      high-density capacitor applications. (c) 2006 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000240035400073},
      doi          = {10.1063/1.2336626},
      url          = {https://juser.fz-juelich.de/record/52315},
}