%0 Journal Article
%A Ohly, C.
%A Hoffmann-Eifert, S.
%A Guo, X.
%A Schubert, J.
%A Waser, R.
%T Electrical conductivity of epitaxial SrTiO3 thin films as a function of oxygen partial pressure and temperature
%J Journal of the American Ceramic Society
%V 89
%@ 0002-7820
%C Oxford [u.a.]
%I Wiley-Blackwell
%M PreJuSER-52507
%P 2845
%D 2006
%Z Record converted from VDB: 12.11.2012
%X SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm, and 250 nm were prepared on MgO (100) substrates by pulsed-laser deposition. The electrical conductivities of the thin films were systematically investigated as a function of temperature and ambient oxygen partial pressure. This was made possible by using a specially designed measurement setup, allowing the reliable determination of resistances of up to 25 GΩ in the temperature range of 600°–1000°C under continuously adjustable oxygen partial pressures ranging from 10−20 to 1 bar. The capabilities of the measurement setup were tested thoroughly by measuring a SrTiO3 single crystal. The well-known characteristics, e.g., the decline of the conductivity with a slope of –1/4 under reducing conditions and the opposite +1/4 behavior in oxidizing atmospheres, are found in the log(σ)–log(pO2) profiles of the epitaxial films. However, the p-type conductivity decreases, and the n-type conductivity increases with decreasing film thickness. This phenomenon is attributed to the charge carrier redistribution in the surface space charge layers. Owing to the high surface-to-volume ratio, the space charge layers play an important role in thin films.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000239863100026
%R 10.1111/j.1551-2916.2006.01178.x
%U https://juser.fz-juelich.de/record/52507