TY  - JOUR
AU  - Ohly, C.
AU  - Hoffmann-Eifert, S.
AU  - Guo, X.
AU  - Schubert, J.
AU  - Waser, R.
TI  - Electrical conductivity of epitaxial SrTiO3 thin films as a function of oxygen partial pressure and temperature
JO  - Journal of the American Ceramic Society
VL  - 89
SN  - 0002-7820
CY  - Oxford [u.a.]
PB  - Wiley-Blackwell
M1  - PreJuSER-52507
SP  - 2845
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm, and 250 nm were prepared on MgO (100) substrates by pulsed-laser deposition. The electrical conductivities of the thin films were systematically investigated as a function of temperature and ambient oxygen partial pressure. This was made possible by using a specially designed measurement setup, allowing the reliable determination of resistances of up to 25 GΩ in the temperature range of 600°–1000°C under continuously adjustable oxygen partial pressures ranging from 10−20 to 1 bar. The capabilities of the measurement setup were tested thoroughly by measuring a SrTiO3 single crystal. The well-known characteristics, e.g., the decline of the conductivity with a slope of –1/4 under reducing conditions and the opposite +1/4 behavior in oxidizing atmospheres, are found in the log(σ)–log(pO2) profiles of the epitaxial films. However, the p-type conductivity decreases, and the n-type conductivity increases with decreasing film thickness. This phenomenon is attributed to the charge carrier redistribution in the surface space charge layers. Owing to the high surface-to-volume ratio, the space charge layers play an important role in thin films.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000239863100026
DO  - DOI:10.1111/j.1551-2916.2006.01178.x
UR  - https://juser.fz-juelich.de/record/52507
ER  -