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@ARTICLE{Ohly:52507,
      author       = {Ohly, C. and Hoffmann-Eifert, S. and Guo, X. and Schubert,
                      J. and Waser, R.},
      title        = {{E}lectrical conductivity of epitaxial {S}r{T}i{O}3 thin
                      films as a function of oxygen partial pressure and
                      temperature},
      journal      = {Journal of the American Ceramic Society},
      volume       = {89},
      issn         = {0002-7820},
      address      = {Oxford [u.a.]},
      publisher    = {Wiley-Blackwell},
      reportid     = {PreJuSER-52507},
      pages        = {2845},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm,
                      and 250 nm were prepared on MgO (100) substrates by
                      pulsed-laser deposition. The electrical conductivities of
                      the thin films were systematically investigated as a
                      function of temperature and ambient oxygen partial pressure.
                      This was made possible by using a specially designed
                      measurement setup, allowing the reliable determination of
                      resistances of up to 25 GΩ in the temperature range of
                      600°–1000°C under continuously adjustable oxygen partial
                      pressures ranging from 10−20 to 1 bar. The capabilities of
                      the measurement setup were tested thoroughly by measuring a
                      SrTiO3 single crystal. The well-known characteristics, e.g.,
                      the decline of the conductivity with a slope of –1/4 under
                      reducing conditions and the opposite +1/4 behavior in
                      oxidizing atmospheres, are found in the log(σ)–log(pO2)
                      profiles of the epitaxial films. However, the p-type
                      conductivity decreases, and the n-type conductivity
                      increases with decreasing film thickness. This phenomenon is
                      attributed to the charge carrier redistribution in the
                      surface space charge layers. Owing to the high
                      surface-to-volume ratio, the space charge layers play an
                      important role in thin films.},
      cin          = {IFF-IEM / CNI / ISG-1 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB41
                      / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Ceramics},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000239863100026},
      doi          = {10.1111/j.1551-2916.2006.01178.x},
      url          = {https://juser.fz-juelich.de/record/52507},
}