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| 001 | 52507 | ||
| 005 | 20210812105649.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1111/j.1551-2916.2006.01178.x |
| 024 | 7 | _ | |2 WOS |a WOS:000239863100026 |
| 037 | _ | _ | |a PreJuSER-52507 |
| 041 | _ | _ | |a ENG |
| 082 | _ | _ | |a 660 |
| 084 | _ | _ | |2 WoS |a Materials Science, Ceramics |
| 100 | 1 | _ | |0 P:(DE-Juel1)VDB3101 |a Ohly, C. |b 0 |u FZJ |
| 245 | _ | _ | |a Electrical conductivity of epitaxial SrTiO3 thin films as a function of oxygen partial pressure and temperature |
| 260 | _ | _ | |a Oxford [u.a.] |b Wiley-Blackwell |c 2006 |
| 300 | _ | _ | |a 2845 |
| 336 | 7 | _ | |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |a Journal Article |
| 336 | 7 | _ | |2 DataCite |a Output Types/Journal article |
| 336 | 7 | _ | |0 0 |2 EndNote |a Journal Article |
| 336 | 7 | _ | |2 BibTeX |a ARTICLE |
| 336 | 7 | _ | |2 ORCID |a JOURNAL_ARTICLE |
| 336 | 7 | _ | |2 DRIVER |a article |
| 440 | _ | 0 | |0 3845 |a Journal of the American Ceramic Society |v 89 |x 0002-7820 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a SrTiO3 (100) epitaxial films with thicknesses of 3, 1 μm, and 250 nm were prepared on MgO (100) substrates by pulsed-laser deposition. The electrical conductivities of the thin films were systematically investigated as a function of temperature and ambient oxygen partial pressure. This was made possible by using a specially designed measurement setup, allowing the reliable determination of resistances of up to 25 GΩ in the temperature range of 600°–1000°C under continuously adjustable oxygen partial pressures ranging from 10−20 to 1 bar. The capabilities of the measurement setup were tested thoroughly by measuring a SrTiO3 single crystal. The well-known characteristics, e.g., the decline of the conductivity with a slope of –1/4 under reducing conditions and the opposite +1/4 behavior in oxidizing atmospheres, are found in the log(σ)–log(pO2) profiles of the epitaxial films. However, the p-type conductivity decreases, and the n-type conductivity increases with decreasing film thickness. This phenomenon is attributed to the charge carrier redistribution in the surface space charge layers. Owing to the high surface-to-volume ratio, the space charge layers play an important role in thin films. |
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| 700 | 1 | _ | |0 P:(DE-Juel1)VDB3102 |a Hoffmann-Eifert, S. |b 1 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)VDB518 |a Guo, X. |b 2 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)128631 |a Schubert, J. |b 3 |u FZJ |
| 700 | 1 | _ | |0 P:(DE-Juel1)131022 |a Waser, R. |b 4 |u FZJ |
| 773 | _ | _ | |0 PERI:(DE-600)2008170-4 |a 10.1111/j.1551-2916.2006.01178.x |g Vol. 89, p. 2845 |p 2845 |q 89<2845 |t Journal of the American Ceramic Society |v 89 |x 0002-7820 |y 2006 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1111/j.1551-2916.2006.01178.x |
| 909 | C | O | |o oai:juser.fz-juelich.de:52507 |p VDB |
| 913 | 1 | _ | |0 G:(DE-Juel1)FUEK412 |b Schlüsseltechnologien |k P42 |l Grundlagen für zukünftige Informationstechnologien (FIT) |v Grundlagen für zukünftige Informationstechnologien |x 0 |
| 914 | 1 | _ | |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB321 |d 31.12.2006 |g IFF |k IFF-IEM |l Elektronische Materialien |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB381 |d 14.09.2008 |g CNI |k CNI |l Center of Nanoelectronic Systems for Information Technology |x 1 |z 381 |
| 920 | 1 | _ | |0 I:(DE-Juel1)VDB41 |d 31.12.2006 |g ISG |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |x 2 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |g JARA |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |x 3 |
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