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@ARTICLE{Watanabe:52676,
      author       = {Watanabe, T. and Funakubo, H.},
      title        = {{C}ontrolled crystal growth of layered-perovskite thin
                      films as an approach to study their basic properties},
      journal      = {Journal of applied physics},
      volume       = {100},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-52676},
      pages        = {051602},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {This article describes the current progress in thin bismuth
                      layer-structured ferroelectric films (BLSFs) including
                      SrBi2Ta2O9 and (Bi,La)(4)Ti3O12, particularly those
                      developed in the last ten years. BLSF thin films can be
                      applied to ferroelectric random access memories because of
                      their durable fatigue-free properties and lead-free
                      composition. We will briefly introduce epitaxial thin films
                      grown on a variety of substrates. Because of the difficulty
                      in growing single crystals of sufficient size to
                      characterize the ferroelectric behavior in specific crystal
                      growth directions, we will characterize epitaxially grown
                      thin films to obtain basic information about the anisotropic
                      switching behavior, which is important for evaluating the
                      performance of emerging materials. We will then discuss the
                      fiber-textured growth on the (111)Pt-covered Si substrates
                      of SrBi2Ta2O9 and Bi4Ti3O12 thin films. Because we expect
                      that the spread crystal orientation will affect the
                      bit-to-bit errors, we believe that the fiber-textured growth
                      and the characterization technique for the deposited film
                      orientation are interesting from a practical standpoint.
                      Another specific challenge of thin film growth is the growth
                      of a-axis-(polar axis)-oriented films. a-/b-axis-oriented
                      films are characterized both crystallographically and by
                      electric hysteresis loop. The hysteresis performance was in
                      accordance with the volume fraction of the a/b domains;
                      however, no evidence for 90 degrees switching of the b
                      domain by an external electric field was obtained. The
                      control of film orientation also allows systematic studies
                      on the effects of a structural modification and relation
                      between spontaneous polarization and Curie temperature,
                      examples of which are given in this paper. After a short
                      description of the piezoelectric properties, we will
                      conclude with a summary and the future prospects of BLSF
                      thin films for research and applications. (c) 2006 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000240602500003},
      doi          = {10.1063/1.2337357},
      url          = {https://juser.fz-juelich.de/record/52676},
}