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000052764 084__ $$2WoS$$aChemistry, Multidisciplinary
000052764 084__ $$2WoS$$aChemistry, Physical
000052764 084__ $$2WoS$$aNanoscience & Nanotechnology
000052764 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000052764 084__ $$2WoS$$aPhysics, Applied
000052764 084__ $$2WoS$$aPhysics, Condensed Matter
000052764 1001_ $$0P:(DE-HGF)0$$aChen, Z.$$b0
000052764 245__ $$aThe Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors
000052764 260__ $$aWashington, DC$$bACS Publ.$$c2005
000052764 300__ $$a1497 - 1502
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000052764 440_0 $$013841$$aNano Letters$$v5$$x1530-6984$$y7
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000052764 520__ $$aSingle-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling barrier whose height is determined by the nanotube diameter and the nature of the source/drain metal contacts. Our study permits identification of the desired combination of tube diameter and type of metal that provides the optimum performance of a CNFET.
000052764 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000052764 7001_ $$0P:(DE-HGF)0$$aAppenzeller, J.$$b1
000052764 7001_ $$0P:(DE-Juel1)VDB56683$$aKnoch, J.$$b2$$uFZJ
000052764 7001_ $$0P:(DE-HGF)0$$aLin, Y.$$b3
000052764 7001_ $$0P:(DE-HGF)0$$aAvouris, P.$$b4
000052764 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/nl0508624$$gVol. 5, p. 1497 - 1502$$p1497 - 1502$$q5<1497 - 1502$$tNano letters$$v5$$x1530-6984$$y2005
000052764 8567_ $$uhttp://hdl.handle.net/2128/2035$$uhttp://dx.doi.org/10.1021/nl0508624
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000052764 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
000052764 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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