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000052769 0247_ $$2DOI$$a10.1109/TNANO.2005.851427
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000052769 084__ $$2WoS$$aEngineering, Electrical & Electronic
000052769 084__ $$2WoS$$aNanoscience & Nanotechnology
000052769 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000052769 084__ $$2WoS$$aPhysics, Applied
000052769 1001_ $$0P:(DE-HGF)0$$aLin, Y.$$b0
000052769 245__ $$aHigh-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
000052769 260__ $$aNew York, NY$$bIEEE$$c2005
000052769 300__ $$a481 - 489
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000052769 440_0 $$015701$$aIEEE Transactions on Nanotechnology$$v4$$x1536-125X$$y5
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000052769 520__ $$aState-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-State performance and a steep subthreshold swing (S = 63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics.
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000052769 65320 $$2Author$$acarbon nanotube
000052769 65320 $$2Author$$adoping
000052769 65320 $$2Author$$afield-effect transistor
000052769 65320 $$2Author$$aSchottky barrier (SB)
000052769 7001_ $$0P:(DE-HGF)0$$aAppenzeller, J.$$b1
000052769 7001_ $$0P:(DE-Juel1)VDB56683$$aKnoch, J.$$b2$$uFZJ
000052769 7001_ $$0P:(DE-HGF)0$$aAvouris, P.$$b3
000052769 773__ $$0PERI:(DE-600)2082654-0$$a10.1109/TNANO.2005.851427$$gVol. 4, p. 481 - 489$$p481 - 489$$q4<481 - 489$$tIEEE transactions on nanotechnology$$v4$$x1536-125X$$y2005
000052769 8567_ $$uhttp://hdl.handle.net/2128/2038$$uhttp://dx.doi.org/10.1109/TNANO.2005.851427
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000052769 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
000052769 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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