TY  - JOUR
AU  - Lin, Y.
AU  - Appenzeller, J.
AU  - Knoch, J.
AU  - Avouris, P.
TI  - High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities
JO  - IEEE transactions on nanotechnology
VL  - 4
SN  - 1536-125X
CY  - New York, NY
PB  - IEEE
M1  - PreJuSER-52769
SP  - 481 - 489
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-State performance and a steep subthreshold swing (S = 63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000231809500001
DO  - DOI:10.1109/TNANO.2005.851427
UR  - https://juser.fz-juelich.de/record/52769
ER  -