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| 001 | 52769 | ||
| 005 | 20200423204352.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://ieeexplore.ieee.org/Xplore/dynhome.jsp |
| 024 | 7 | _ | |a 10.1109/TNANO.2005.851427 |2 DOI |
| 024 | 7 | _ | |a WOS:000231809500001 |2 WOS |
| 024 | 7 | _ | |a 2128/2038 |2 Handle |
| 024 | 7 | _ | |a altmetric:21815693 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-52769 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Lin, Y. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a High-Performance Carbon Nanotube Field-Effect Transistor With Tunable Polarities |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2005 |
| 300 | _ | _ | |a 481 - 489 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a IEEE Transactions on Nanotechnology |x 1536-125X |0 15701 |y 5 |v 4 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-State performance and a steep subthreshold swing (S = 63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a carbon nanotube |
| 653 | 2 | 0 | |2 Author |a doping |
| 653 | 2 | 0 | |2 Author |a field-effect transistor |
| 653 | 2 | 0 | |2 Author |a Schottky barrier (SB) |
| 700 | 1 | _ | |a Appenzeller, J. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Knoch, J. |b 2 |u FZJ |0 P:(DE-Juel1)VDB56683 |
| 700 | 1 | _ | |a Avouris, P. |b 3 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1109/TNANO.2005.851427 |g Vol. 4, p. 481 - 489 |p 481 - 489 |q 4<481 - 489 |0 PERI:(DE-600)2082654-0 |t IEEE transactions on nanotechnology |v 4 |y 2005 |x 1536-125X |
| 856 | 7 | _ | |u http://dx.doi.org/10.1109/TNANO.2005.851427 |u http://hdl.handle.net/2128/2038 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/52769/files/82992.pdf |y OpenAccess |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/52769/files/82992.jpg?subformat=icon-1440 |x icon-1440 |y OpenAccess |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/52769/files/82992.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
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| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2005 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 915 | _ | _ | |2 StatID |0 StatID:(DE-HGF)0510 |a OpenAccess |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
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