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000052861 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000052861 084__ $$2WoS$$aPhysics, Applied
000052861 084__ $$2WoS$$aPhysics, Condensed Matter
000052861 1001_ $$0P:(DE-HGF)0$$aPicozzi, S.$$b0
000052861 245__ $$aElectronic structure and exchange constants in magnetic semiconductor digital alloys: chemical and band-gap effects
000052861 260__ $$aWeinheim$$bWiley-VCH$$c2006
000052861 300__ $$a2738 - 2745
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000052861 440_0 $$04913$$aPhysica Status Solidi A$$v203$$x0031-8965
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000052861 520__ $$aFirst-principles simulations have been performed for [001]-ordered Mn/Ge and Mn/GaAs "digital alloys", focusing on the effects of (i) a larger band-gap and (ii) a different semiconducting host on the electronic structure of the magnetic semiconductors of interest. Our results for the exchange constants in Mn/Ge, evaluated using a frozen-magnon scheme, show that a larger band-gap tends to give a stronger nearest-neighbor ferromagnetic coupling and an overall enhanced in-plane ferromagnetic coupling even for longer-ranged coupling constants. As for the chemical effects on the exchange constants, we show that Mn/GaAs shows a smaller nearest-neighbor ferromagnetic coupling than Mn/Ge, but exchange constants for higher Mn-Mn distance show an overall increased ferromagnetic behavior in Mn/GaAs. As a result, from the magnetic-coupling point of view, the two systems behave on average rather similarly. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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000052861 7001_ $$0P:(DE-Juel1)VDB37180$$aLezaic, M.$$b1$$uFZJ
000052861 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b2$$uFZJ
000052861 773__ $$0PERI:(DE-600)1481091-8$$a10.1002/pssa.200669574$$gVol. 203, p. 2738 - 2745$$p2738 - 2745$$q203<2738 - 2745$$tPhysica status solidi / A$$v203$$x0031-8965$$y2006
000052861 8567_ $$uhttp://dx.doi.org/10.1002/pssa.200669574
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