001     52861
005     20180211181256.0
024 7 _ |2 DOI
|a 10.1002/pssa.200669574
024 7 _ |2 WOS
|a WOS:000240849800033
037 _ _ |a PreJuSER-52861
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082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Picozzi, S.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Electronic structure and exchange constants in magnetic semiconductor digital alloys: chemical and band-gap effects
260 _ _ |a Weinheim
|b Wiley-VCH
|c 2006
300 _ _ |a 2738 - 2745
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physica Status Solidi A
|x 0031-8965
|0 4913
|v 203
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a First-principles simulations have been performed for [001]-ordered Mn/Ge and Mn/GaAs "digital alloys", focusing on the effects of (i) a larger band-gap and (ii) a different semiconducting host on the electronic structure of the magnetic semiconductors of interest. Our results for the exchange constants in Mn/Ge, evaluated using a frozen-magnon scheme, show that a larger band-gap tends to give a stronger nearest-neighbor ferromagnetic coupling and an overall enhanced in-plane ferromagnetic coupling even for longer-ranged coupling constants. As for the chemical effects on the exchange constants, we show that Mn/GaAs shows a smaller nearest-neighbor ferromagnetic coupling than Mn/Ge, but exchange constants for higher Mn-Mn distance show an overall increased ferromagnetic behavior in Mn/GaAs. As a result, from the magnetic-coupling point of view, the two systems behave on average rather similarly. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
536 _ _ |a Kondensierte Materie
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700 1 _ |a Lezaic, M.
|b 1
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700 1 _ |a Blügel, S.
|b 2
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|0 P:(DE-Juel1)130548
773 _ _ |a 10.1002/pssa.200669574
|g Vol. 203, p. 2738 - 2745
|p 2738 - 2745
|q 203<2738 - 2745
|0 PERI:(DE-600)1481091-8
|t Physica status solidi / A
|v 203
|y 2006
|x 0031-8965
856 7 _ |u http://dx.doi.org/10.1002/pssa.200669574
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920 1 _ |d 31.12.2006
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