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000052975 0247_ $$2DOI$$a10.1103/PhysRevLett.97.146803
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000052975 084__ $$2WoS$$aPhysics, Multidisciplinary
000052975 1001_ $$0P:(DE-HGF)0$$aHirahara, T.$$b0
000052975 245__ $$aRole of Spin-Orbit Coupling and Hybridization Effects in the Electronic Structure of Ultrathin Bi Films
000052975 260__ $$aCollege Park, Md.$$bAPS$$c2006
000052975 300__ $$a146803
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000052975 440_0 $$04925$$aPhysical Review Letters$$v97$$x0031-9007
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000052975 520__ $$aThe electronic structure of Bi(001) ultrathin films (thickness >= 7 bilayers) on Si(111)-7x7 was studied by angle-resolved photoemission spectroscopy and first-principles calculations. In contrast with the semimetallic nature of bulk Bi, both the experiment and theory demonstrate the metallic character of the films with the Fermi surface formed by spin-orbit-split surface states (SSs) showing little thickness dependence. Below the Fermi level, we clearly detected quantum well states (QWSs) at the M ($) over bar point, which were surprisingly found to be non-spin-orbit split; the films are "electronically symmetric" despite the obvious structural nonequivalence of the top and bottom interfaces. We found that the SSs hybridize with the QWSs near M ($) over bar and lose their spin-orbit-split character.
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000052975 7001_ $$0P:(DE-HGF)0$$aNagao, T.$$b1
000052975 7001_ $$0P:(DE-HGF)0$$aMatsuda, I.$$b2
000052975 7001_ $$0P:(DE-Juel1)130545$$aBihlmayer, G.$$b3$$uFZJ
000052975 7001_ $$0P:(DE-HGF)0$$aChulkov, E. V.$$b4
000052975 7001_ $$0P:(DE-HGF)0$$aKoroteev, S. B.$$b5
000052975 7001_ $$0P:(DE-HGF)0$$aEchenique, P. M.$$b6
000052975 7001_ $$0P:(DE-HGF)0$$aSaito, M.$$b7
000052975 7001_ $$0P:(DE-HGF)0$$aHasagawa, S.$$b8
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000052975 8567_ $$uhttp://hdl.handle.net/2128/1449$$uhttp://dx.doi.org/10.1103/PhysRevLett.97.146803
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