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017 _ _ |a This version is available at the following Publisher URL: http://prl.aps.org
024 7 _ |a 10.1103/PhysRevLett.97.146803
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024 7 _ |a WOS:000241057100060
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024 7 _ |a 2128/1449
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|a Physics, Multidisciplinary
100 1 _ |a Hirahara, T.
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245 _ _ |a Role of Spin-Orbit Coupling and Hybridization Effects in the Electronic Structure of Ultrathin Bi Films
260 _ _ |a College Park, Md.
|b APS
|c 2006
300 _ _ |a 146803
336 7 _ |a Journal Article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 97
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The electronic structure of Bi(001) ultrathin films (thickness >= 7 bilayers) on Si(111)-7x7 was studied by angle-resolved photoemission spectroscopy and first-principles calculations. In contrast with the semimetallic nature of bulk Bi, both the experiment and theory demonstrate the metallic character of the films with the Fermi surface formed by spin-orbit-split surface states (SSs) showing little thickness dependence. Below the Fermi level, we clearly detected quantum well states (QWSs) at the M ($) over bar point, which were surprisingly found to be non-spin-orbit split; the films are "electronically symmetric" despite the obvious structural nonequivalence of the top and bottom interfaces. We found that the SSs hybridize with the QWSs near M ($) over bar and lose their spin-orbit-split character.
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700 1 _ |a Nagao, T.
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700 1 _ |a Matsuda, I.
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700 1 _ |a Bihlmayer, G.
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700 1 _ |a Chulkov, E. V.
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700 1 _ |a Koroteev, S. B.
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700 1 _ |a Echenique, P. M.
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700 1 _ |a Saito, M.
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700 1 _ |a Hasagawa, S.
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773 _ _ |a 10.1103/PhysRevLett.97.146803
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.97.146803
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