%0 Journal Article
%A Waser, R.
%A Dittmann, R.
%A Staikov, G.
%A Szot, K.
%T Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges
%J Advanced materials
%V 21
%@ 0935-9648
%C Weinheim
%I Wiley-VCH
%M PreJuSER-5316
%D 2009
%Z Record converted from VDB: 12.11.2012
%X This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000268309100006
%R 10.1002/adma.200900375
%U https://juser.fz-juelich.de/record/5316