TY  - JOUR
AU  - Waser, R.
AU  - Dittmann, R.
AU  - Staikov, G.
AU  - Szot, K.
TI  - Redox-based resistive switching memories - nanoionic mechanisms, prospects and challenges
JO  - Advanced materials
VL  - 21
SN  - 0935-9648
CY  - Weinheim
PB  - Wiley-VCH
M1  - PreJuSER-5316
PY  - 2009
N1  - Record converted from VDB: 12.11.2012
AB  - This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a thermochemical mechanism, respectively. The current understanding of the microscopic mechanisms is discussed and the scaling potential is outlined.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000268309100006
DO  - DOI:10.1002/adma.200900375
UR  - https://juser.fz-juelich.de/record/5316
ER  -