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@ARTICLE{Waser:5316,
author = {Waser, R. and Dittmann, R. and Staikov, G. and Szot, K.},
title = {{R}edox-based resistive switching memories - nanoionic
mechanisms, prospects and challenges},
journal = {Advanced materials},
volume = {21},
issn = {0935-9648},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {PreJuSER-5316},
year = {2009},
note = {Record converted from VDB: 12.11.2012},
abstract = {This review article introduces resistive switching
processes that are being considered for nanoelectronic
nonvolatile memories. The three main classes are based on an
electrochemical metallization mechanism, a valence change
mechanism, and a thermochemical mechanism, respectively. The
current understanding of the microscopic mechanisms is
discussed and the scaling potential is outlined.},
keywords = {J (WoSType)},
cin = {IFF-6 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Chemistry, Multidisciplinary / Chemistry, Physical /
Nanoscience $\&$ Nanotechnology / Materials Science,
Multidisciplinary / Physics, Applied / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000268309100006},
doi = {10.1002/adma.200900375},
url = {https://juser.fz-juelich.de/record/5316},
}