000053197 001__ 53197
000053197 005__ 20200423204356.0
000053197 017__ $$aThis version is available at the following Publisher URL: http://apl.aip.org
000053197 0247_ $$2DOI$$a10.1063/1.2150581
000053197 0247_ $$2WOS$$aWOS:000234338700097
000053197 0247_ $$2Handle$$a2128/2041
000053197 037__ $$aPreJuSER-53197
000053197 041__ $$aeng
000053197 082__ $$a530
000053197 084__ $$2WoS$$aPhysics, Applied
000053197 1001_ $$0P:(DE-Juel1)VDB56683$$aKnoch, J.$$b0$$uFZJ
000053197 245__ $$aEffective Schottky barrier lowering in silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect transistors using dopant segregation
000053197 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2005
000053197 300__ $$a263505
000053197 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000053197 3367_ $$2DataCite$$aOutput Types/Journal article
000053197 3367_ $$00$$2EndNote$$aJournal Article
000053197 3367_ $$2BibTeX$$aARTICLE
000053197 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000053197 3367_ $$2DRIVER$$aarticle
000053197 440_0 $$0562$$aApplied Physics Letters$$v87$$x0003-6951
000053197 500__ $$aRecord converted from VDB: 12.11.2012
000053197 520__ $$aWe present an investigation of the use of dopant segregation in Schottky-barrier metal-oxide-semiconductor field-effect transistors on silicon-on-insulator. Experimental results on devices with fully nickel silicided source and drain contacts show that arsenic segregation during silicidation leads to strongly improved device characteristics due to a strong conduction/valence band bending at the contact interface induced by a very thin, highly doped silicon layer formed during the silicidation. With simulations, we study the effect of varying silicon-on-insulator and gate oxide thicknesses on the performance of Schottky-barrier devices with dopant segregation. It is shown that due to the improved electrostatic gate control, a combination of both ultrathin silicon bodies and gate oxides with dopant segregation yields even further improved device characteristics greatly relaxing the need for low Schottky barrier materials in order to realize high-performance Schottky-barrier transistors.
000053197 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000053197 588__ $$aDataset connected to Web of Science
000053197 650_7 $$2WoSType$$aJ
000053197 7001_ $$0P:(DE-Juel1)VDB63941$$aZang, M.$$b1$$uFZJ
000053197 7001_ $$0P:(DE-Juel1)VDB5539$$aZhao, Q. T.$$b2$$uFZJ
000053197 7001_ $$0P:(DE-Juel1)128602$$aLenk, S.$$b3$$uFZJ
000053197 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b4$$uFZJ
000053197 7001_ $$0P:(DE-HGF)0$$aAppenzeller, J.$$b5
000053197 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.2150581$$gVol. 87, p. 263505$$p263505$$q87<263505$$tApplied physics letters$$v87$$x0003-6951$$y2005
000053197 8567_ $$uhttp://hdl.handle.net/2128/2041$$uhttp://dx.doi.org/10.1063/1.2150581
000053197 8564_ $$uhttps://juser.fz-juelich.de/record/53197/files/83655.pdf$$yOpenAccess
000053197 8564_ $$uhttps://juser.fz-juelich.de/record/53197/files/83655.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000053197 8564_ $$uhttps://juser.fz-juelich.de/record/53197/files/83655.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000053197 8564_ $$uhttps://juser.fz-juelich.de/record/53197/files/83655.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000053197 909CO $$ooai:juser.fz-juelich.de:53197$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000053197 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$x0
000053197 9141_ $$aNachtrag$$y2005
000053197 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000053197 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000053197 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
000053197 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000053197 970__ $$aVDB:(DE-Juel1)83655
000053197 980__ $$aVDB
000053197 980__ $$aJUWEL
000053197 980__ $$aConvertedRecord
000053197 980__ $$ajournal
000053197 980__ $$aI:(DE-Juel1)PGI-9-20110106
000053197 980__ $$aI:(DE-Juel1)VDB381
000053197 980__ $$aUNRESTRICTED
000053197 980__ $$aFullTexts
000053197 9801_ $$aFullTexts
000053197 981__ $$aI:(DE-Juel1)PGI-9-20110106
000053197 981__ $$aI:(DE-Juel1)VDB381