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@ARTICLE{Knoch:53197,
      author       = {Knoch, J. and Zang, M. and Zhao, Q. T. and Lenk, S. and
                      Mantl, S. and Appenzeller, J.},
      title        = {{E}ffective {S}chottky barrier lowering in
                      silicon-on-insulator {S}chottky-barrier
                      metal-oxide-semiconductor field-effect transistors using
                      dopant segregation},
      journal      = {Applied physics letters},
      volume       = {87},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-53197},
      pages        = {263505},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We present an investigation of the use of dopant
                      segregation in Schottky-barrier metal-oxide-semiconductor
                      field-effect transistors on silicon-on-insulator.
                      Experimental results on devices with fully nickel silicided
                      source and drain contacts show that arsenic segregation
                      during silicidation leads to strongly improved device
                      characteristics due to a strong conduction/valence band
                      bending at the contact interface induced by a very thin,
                      highly doped silicon layer formed during the silicidation.
                      With simulations, we study the effect of varying
                      silicon-on-insulator and gate oxide thicknesses on the
                      performance of Schottky-barrier devices with dopant
                      segregation. It is shown that due to the improved
                      electrostatic gate control, a combination of both ultrathin
                      silicon bodies and gate oxides with dopant segregation
                      yields even further improved device characteristics greatly
                      relaxing the need for low Schottky barrier materials in
                      order to realize high-performance Schottky-barrier
                      transistors.},
      keywords     = {J (WoSType)},
      cin          = {ISG-1 / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000234338700097},
      doi          = {10.1063/1.2150581},
      url          = {https://juser.fz-juelich.de/record/53197},
}