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@ARTICLE{Watanabe:53254,
      author       = {Watanabe, T. and Hoffmann-Eifert, S. and Hwang, C. S. and
                      Waser, R.},
      title        = {{L}iquid-injection atomic layer deposition of {T}i{O}x and
                      {P}b-{T}i-{O} films},
      journal      = {Journal of the Electrochemical Society},
      volume       = {153},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-53254},
      pages        = {F199 - F204},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Pb-Ti-O films were prepared by liquid-injection atomic
                      layer deposition (ALD) using H2O as oxygen source after
                      evaluating Ti precursors with different beta-diketonate type
                      ligands, Ti(OC3H7)(2)(C11H19O2)(2) [Ti(Oi-Pr)(2)(DPM)(2)]
                      and Ti(OC5H11)(2)(C10H17O2)(2) [Ti(Ot-Am)(2)(IBPM)(2)],
                      dissolved in ethylcyclohexane. For both Ti precursors, the
                      apparent thermal activation energy of the deposition rate of
                      TiOx films increased at a deposition temperature of about
                      380 degrees C, and the deposition rate of TiOx films grown
                      at 300 degrees C saturated against the volume of injected Ti
                      precursors. Ti(Oi-Pr)(2)(DPM)(2) was selected for the
                      subsequent Pb-Ti-O film deposition because of its high
                      precursor efficiency and the low temperature dependence of
                      the deposition rate. Pb-Ti-O films were prepared using
                      Ti(Oi-Pr)(2)(DPM)(2) and Pb(C12H21O2)(2) [Pb(TMOD)(2)] at
                      deposition temperatures of 240 and 300 degrees C. The
                      deposition rates of Pb and Ti in the Pb-Ti-O process were
                      higher than those in binary PbO and TiOx processes under the
                      same deposition conditions. The deposition rate of Pb in the
                      Pb-Ti-O process showed a linear increase in response to the
                      injected Pb precursor volume, which was different from the
                      saturated deposition rate of the PbO process. The interface
                      chemistry between the precursors and predeposited cation
                      layers has critical impact on the self-regulated growth
                      mechanism in the multicomponent oxide ALD. (c) 2006 The
                      Electrochemical Society.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000239250600052},
      doi          = {10.1149/1.2219709},
      url          = {https://juser.fz-juelich.de/record/53254},
}