TY  - JOUR
AU  - Karthäuser, S.
AU  - Lüssem, B.
AU  - Weides, M.
AU  - Alba, M.
AU  - Besmehn, A.
AU  - Oligschlaeger, R.
AU  - Waser, R.
TI  - Resistive switching of rose bengal devices: a molecular effect?
JO  - Journal of applied physics
VL  - 100
SN  - 0021-8979
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-53255
SP  - 094504
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface. (c) 2006 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000242041500107
DO  - DOI:10.1063/1.2364036
UR  - https://juser.fz-juelich.de/record/53255
ER  -