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@ARTICLE{Karthuser:53255,
author = {Karthäuser, S. and Lüssem, B. and Weides, M. and Alba, M.
and Besmehn, A. and Oligschlaeger, R. and Waser, R.},
title = {{R}esistive switching of rose bengal devices: a molecular
effect?},
journal = {Journal of applied physics},
volume = {100},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-53255},
pages = {094504},
year = {2006},
note = {Record converted from VDB: 12.11.2012},
abstract = {The resistive switching behavior of devices consisting of
aluminum top electrode, molecular layer (rose bengal), and
bottom electrode (zinc oxide and indium tin oxide) is
examined. By measuring the current versus voltage dependence
of these devices for various frequencies and by
systematically varying the composition of the device, we
show that the switching is an extrinsic effect that is not
primarily dependent on the molecular layer. It is shown that
the molecular layer is short circuited by filaments of
either zinc oxide or aluminum and that the switching effect
is due to a thin layer of aluminum oxide at the zinc
oxide/aluminum interface. (c) 2006 American Institute of
Physics.},
keywords = {J (WoSType)},
cin = {IFF-IEM / CNI / ZCH / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381 /
I:(DE-Juel1)ZCH-20090406 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000242041500107},
doi = {10.1063/1.2364036},
url = {https://juser.fz-juelich.de/record/53255},
}