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@ARTICLE{Ehrhart:53299,
      author       = {Ehrhart, P. and Thomas, R.},
      title        = {{E}lectrical properties of ({B}a, {S}r) {T}i{O}3 thin films
                      revisited: the case of chemical vapor deposited films on
                      {P}t electrodes},
      journal      = {Journal of applied physics},
      volume       = {99},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-53299},
      pages        = {114108},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Due to the dependence on both bulk and interface properties
                      neither the effective dielectric constant epsilon nor the
                      leakage current J can be scaled in a straightforward manner
                      with film thickness for high-epsilon thin film capacitors.
                      Based on detailed investigations of different thickness
                      series of (Ba,Sr)TiO3 films on platinized substrates the
                      bulk and interfacial properties are separated. An approach
                      to estimate the apparent interfacial layer thickness is
                      discussed. The behavior of the leakage current is divided in
                      two regions: for low voltages, <= 1 V, the currents are very
                      low, <= 10(-10) A/cm(2), and dominated by the relaxation
                      currents (Curie-von Schweidler behavior). At higher voltages
                      the change to a very strong power law dependence is
                      observed, J similar to E-16. The thickness dependence is
                      removed by scaling with the internal field or dielectric
                      displacement of the film, D=epsilon(0)epsilon E. Hence, a
                      direct connection between the increase in epsilon and the
                      increase in leakage with film thickness is revealed. This
                      behavior is accompanied by a larger scatter of the data and
                      seems to be controlled by a more inhomogeneous or local
                      conductivity. Influences of the measuring temperature and of
                      stoichiometry and interfacial properties are discussed. (c)
                      2006 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000238314900077},
      doi          = {10.1063/1.2202115},
      url          = {https://juser.fz-juelich.de/record/53299},
}