%0 Journal Article
%A Stoica, T.
%A Meijers, R.
%A Calarco, R.
%A Richter, T.
%A Sutter, E.
%A Lüth, H.
%T Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
%J Nano letters
%V 6
%@ 1530-6984
%C Washington, DC
%I ACS Publ.
%M PreJuSER-53326
%P 1541 - 1547
%D 2006
%Z Record converted from VDB: 12.11.2012
%X The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.
%K Indium: chemistry
%K Luminescence
%K Microscopy, Electron: methods
%K Nanostructures: chemistry
%K Nitrogen: chemistry
%K Photochemistry
%K indium nitride (NLM Chemicals)
%K Indium (NLM Chemicals)
%K Nitrogen (NLM Chemicals)
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:16834446
%U <Go to ISI:>//WOS:000238973100046
%R 10.1021/nl060547x
%U https://juser.fz-juelich.de/record/53326