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000053326 084__ $$2WoS$$aChemistry, Multidisciplinary
000053326 084__ $$2WoS$$aChemistry, Physical
000053326 084__ $$2WoS$$aNanoscience & Nanotechnology
000053326 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000053326 084__ $$2WoS$$aPhysics, Applied
000053326 084__ $$2WoS$$aPhysics, Condensed Matter
000053326 1001_ $$0P:(DE-Juel1)VDB5575$$aStoica, T.$$b0$$uFZJ
000053326 245__ $$aPhotoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
000053326 260__ $$aWashington, DC$$bACS Publ.$$c2006
000053326 300__ $$a1541 - 1547
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000053326 440_0 $$013841$$aNano Letters$$v6$$x1530-6984$$y7
000053326 500__ $$aRecord converted from VDB: 12.11.2012
000053326 520__ $$aThe influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires. Valuable information about band gap and electron concentration was obtained by line shape analysis. Optical band gaps between 730 and 750 meV and electron concentrations of 8 x 10(17) to 6 x 10(18) cm(-3) were derived from the fit of the PL spectra of different samples. The crystalline quality of the wires was investigated by high-resolution transmission electron microscopy.
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000053326 650_2 $$2MeSH$$aIndium: chemistry
000053326 650_2 $$2MeSH$$aLuminescence
000053326 650_2 $$2MeSH$$aMicroscopy, Electron: methods
000053326 650_2 $$2MeSH$$aNanostructures: chemistry
000053326 650_2 $$2MeSH$$aNitrogen: chemistry
000053326 650_2 $$2MeSH$$aPhotochemistry
000053326 650_7 $$00$$2NLM Chemicals$$aindium nitride
000053326 650_7 $$07440-74-6$$2NLM Chemicals$$aIndium
000053326 650_7 $$07727-37-9$$2NLM Chemicals$$aNitrogen
000053326 650_7 $$2WoSType$$aJ
000053326 7001_ $$0P:(DE-Juel1)VDB42064$$aMeijers, R.$$b1$$uFZJ
000053326 7001_ $$0P:(DE-Juel1)VDB12919$$aCalarco, R.$$b2$$uFZJ
000053326 7001_ $$0P:(DE-Juel1)VDB43063$$aRichter, T.$$b3$$uFZJ
000053326 7001_ $$0P:(DE-HGF)0$$aSutter, E.$$b4
000053326 7001_ $$0P:(DE-Juel1)VDB975$$aLüth, H.$$b5$$uFZJ
000053326 773__ $$0PERI:(DE-600)2048866-X$$a10.1021/nl060547x$$gVol. 6, p. 1541 - 1547$$p1541 - 1547$$q6<1541 - 1547$$tNano letters$$v6$$x1530-6984$$y2006
000053326 8567_ $$uhttp://hdl.handle.net/2128/2043$$uhttp://dx.doi.org/10.1021/nl060547x
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000053326 9141_ $$y2006
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000053326 9201_ $$0I:(DE-Juel1)VDB41$$d31.12.2006$$gISG$$kISG-1$$lInstitut für Halbleiterschichten und Bauelemente$$x0
000053326 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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