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000053748 0247_ $$2DOI$$a10.1103/PhysRevLett.95.125502
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000053748 084__ $$2WoS$$aPhysics, Multidisciplinary
000053748 1001_ $$0P:(DE-HGF)0$$aStaab, T. E. M.$$b0
000053748 245__ $$aAgglomeration of As antisites in As-rich low-temperature GaAs: Nucleation without a critical nucleus size
000053748 260__ $$aCollege Park, Md.$$bAPS$$c2005
000053748 300__ $$a125502
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000053748 520__ $$aTo investigate the early stages of nucleation and growth of As precipitates in GaAs grown at low substrate temperature, we make use of a self-consistent-charge density-functional based tight-binding method. Since a pair of As antisites already shows a significant binding energy which increases when more As antisites are attached, there is no critical nucleus size. Provided that all excess As has precipitated, the clusters may grow in size since the binding energies increase with increasing agglomeration size. These findings close the gap between experimental investigation of point defects and the detection of nanometer-size precipitates in transmission electron microscopy.
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000053748 7001_ $$0P:(DE-HGF)0$$aNieminen, R. M.$$b1
000053748 7001_ $$0P:(DE-Juel1)130811$$aLuysberg, M.$$b2$$uFZJ
000053748 7001_ $$0P:(DE-HGF)0$$aFrauenheim, Th.$$b3
000053748 773__ $$0PERI:(DE-600)1472655-5$$a10.1103/PhysRevLett.95.125502$$gVol. 95, p. 125502$$p125502$$q95<125502$$tPhysical review letters$$v95$$x0031-9007$$y2005
000053748 8567_ $$uhttp://hdl.handle.net/2128/1104$$uhttp://dx.doi.org/10.1103/PhysRevLett.95.125502
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