TY  - JOUR
AU  - Staab, T. E. M.
AU  - Nieminen, R. M.
AU  - Luysberg, M.
AU  - Frauenheim, Th.
TI  - Agglomeration of As antisites in As-rich low-temperature GaAs: Nucleation without a critical nucleus size
JO  - Physical review letters
VL  - 95
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-53748
SP  - 125502
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - To investigate the early stages of nucleation and growth of As precipitates in GaAs grown at low substrate temperature, we make use of a self-consistent-charge density-functional based tight-binding method. Since a pair of As antisites already shows a significant binding energy which increases when more As antisites are attached, there is no critical nucleus size. Provided that all excess As has precipitated, the clusters may grow in size since the binding energies increase with increasing agglomeration size. These findings close the gap between experimental investigation of point defects and the detection of nanometer-size precipitates in transmission electron microscopy.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000231908200031
DO  - DOI:10.1103/PhysRevLett.95.125502
UR  - https://juser.fz-juelich.de/record/53748
ER  -