Home > Publications database > Agglomeration of As antisites in As-rich low-temperature GaAs: Nucleation without a critical nucleus size > print

001     53748
005     20240610121237.0
017 _ _ |a This version is available at the following Publisher URL: http://prl.aps.org
024 7 _ |a 10.1103/PhysRevLett.95.125502
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024 7 _ |a WOS:000231908200031
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024 7 _ |a 2128/1104
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037 _ _ |a PreJuSER-53748
041 _ _ |a eng
082 _ _ |a 550
084 _ _ |2 WoS
|a Physics, Multidisciplinary
100 1 _ |a Staab, T. E. M.
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245 _ _ |a Agglomeration of As antisites in As-rich low-temperature GaAs: Nucleation without a critical nucleus size
260 _ _ |a College Park, Md.
|b APS
|c 2005
300 _ _ |a 125502
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Physical Review Letters
|x 0031-9007
|0 4925
|v 95
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a To investigate the early stages of nucleation and growth of As precipitates in GaAs grown at low substrate temperature, we make use of a self-consistent-charge density-functional based tight-binding method. Since a pair of As antisites already shows a significant binding energy which increases when more As antisites are attached, there is no critical nucleus size. Provided that all excess As has precipitated, the clusters may grow in size since the binding energies increase with increasing agglomeration size. These findings close the gap between experimental investigation of point defects and the detection of nanometer-size precipitates in transmission electron microscopy.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Nieminen, R. M.
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700 1 _ |a Luysberg, M.
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700 1 _ |a Frauenheim, Th.
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773 _ _ |a 10.1103/PhysRevLett.95.125502
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|t Physical review letters
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevLett.95.125502
|u http://hdl.handle.net/2128/1104
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