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@ARTICLE{Thomas:54098,
      author       = {Thomas, R. and Ehrhart, P. and Luysberg, M. and Boese, M.
                      and Waser, R. and Roeckerath, M. and Rije, E. and Schubert,
                      J. and van Elshocht, S. and Caymax, M.},
      title        = {{D}ysprosium scandate thin films as an alternate amorphous
                      gate oxide prepared by metal-organic chemical vapor
                      deposition},
      journal      = {Applied physics letters},
      volume       = {89},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-54098},
      pages        = {232902},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Dysprosium scandate (DyScO3) thin films were deposited on
                      Si substrates using metal-organic chemical vapor deposition.
                      Individual source precursors of Dy and Sc were used and
                      deposition temperatures ranged from 480 to 700 degrees C.
                      Films were amorphous with low root mean square roughness (<=
                      2 A) and were stable up to 1050 degrees C annealing.
                      Electrical characterization yielded C-V curves with
                      negligible hysteresis (< 10 mV), high dielectric constant
                      (similar to 22), and low leakage currents. The electrical
                      properties of the DyScO3/SiOx/Si stacks were stable up to
                      800 degrees C for films on native oxide; however, this limit
                      increased to 900 degrees C for films on special chemically
                      grown oxide, suggesting further improvement with proper
                      diffusion barrier. (c) 2006 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IMF / ISG-1 / CNI / IFF-IEM / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB37 / I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB381
                      / I:(DE-Juel1)VDB321 / $I:(DE-82)080009_20140620$},
      pnm          = {Kondensierte Materie / Grundlagen für zukünftige
                      Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK414 / G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000242709200082},
      doi          = {10.1063/1.2402121},
      url          = {https://juser.fz-juelich.de/record/54098},
}