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| 017 | _ | _ | |a This version is available at the following Publisher URL: http://apl.aip.org |
| 024 | 7 | _ | |a 10.1063/1.2402121 |2 DOI |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Thomas, R. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2006 |
| 300 | _ | _ | |a 232902 |
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| 440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |v 89 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Dysprosium scandate (DyScO3) thin films were deposited on Si substrates using metal-organic chemical vapor deposition. Individual source precursors of Dy and Sc were used and deposition temperatures ranged from 480 to 700 degrees C. Films were amorphous with low root mean square roughness (<= 2 A) and were stable up to 1050 degrees C annealing. Electrical characterization yielded C-V curves with negligible hysteresis (< 10 mV), high dielectric constant (similar to 22), and low leakage currents. The electrical properties of the DyScO3/SiOx/Si stacks were stable up to 800 degrees C for films on native oxide; however, this limit increased to 900 degrees C for films on special chemically grown oxide, suggesting further improvement with proper diffusion barrier. (c) 2006 American Institute of Physics. |
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| 773 | _ | _ | |a 10.1063/1.2402121 |g Vol. 89, p. 232902 |p 232902 |q 89<232902 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 89 |y 2006 |x 0003-6951 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.2402121 |u http://hdl.handle.net/2128/1105 |
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