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@ARTICLE{Watanabe:543,
author = {Watanabe, T. and Hoffmann-Eifert, S. and Hwang, C. S. and
Waser, R.},
title = {{G}rowth behavior of atomic-layer-deposited
{P}b({Z}r,{T}i){O}x thin films on planar substrate and
three-dimensional hole structures},
journal = {Journal of the Electrochemical Society},
volume = {155},
issn = {0013-4651},
address = {Pennington, NJ},
publisher = {Electrochemical Society},
reportid = {PreJuSER-543},
pages = {D715},
year = {2008},
note = {The authors thank Dr. A. Besmehn (ZCH, FZJ) for XPS
analysis, W. Krumpen (ZCH, FZJ) for XRF analysis, M. Gebauer
and M. Gerst (IFF-IEM, FZJ) for their technical support, D.
Esser and Dr. H.- J. Penkalla (IEF-2, FZJ) for FIB lamellae
preparation, F. Dorn and Dr. T. Weirich (GFE, RWTH Aachen)
for STEM and HRTEM analysis, and L. Cattaneo, S. Carella
(SAES Getters S. p. A), and Dr. Y. Tasaki (Toshima MfG Co.,
Ltd.) for fruitful discussions. SAES Getters S. p. A is
gratefully acknowledged for supplying the precursors. The 3D
substrates were kindly provided by Samsung Advanced
Institute of Technology. T. W. also extends thanks to the
Alexander von Humboldt Stiftung (AvH) for awarding him a
research fellowship. This collaboration with CSH was
supported by AvH.},
abstract = {Quaternary Pb(Zr, Ti)O-x (PZT) films were deposited at 240
degrees C by a combination of liquid-injection atomic layer
deposition (ALD) of binary PbO, TiOx, and ZrOx thin films.
In preliminary work, binary ZrOx films were deposited at 240
degrees C by ALD. Two solutions of Zr(C9H15O2)(4)
[Zr(DIBM)(4)] and Zr(C11H19O2)(4) [Zr(DPM)(4)] dissolved in
ethylcyclohexane (ECH) were prepared, and it was found that
the Zr(DIBM)(4) solution provides a three-times-higher
deposition rate for the ZrOx films than the Zr(DPM)(4)
solution. We focused the study on the set of precursors
which offers the highest degree of flexibility for adjusting
the Zr/(Zr + Ti) ratio in the PZT films: Pb(C11H19O2)(2)
[Pb(DPM)(2)], Ti[OCH(CH3)(2)](4) [Ti(Oi-Pr)(4)], and
Zr(DIBM)(4) dissolved in ECH, and water as the oxidant. This
set of solutions contributed to increasing the Zr/(Zr + Ti)
ratio in the deposited PZT films to more than 0.2, which
remained below 0.1 in the ALD-PZT using Pb(DPM)(2),
Ti(Oi-Pr)(4), and Zr(DPM)(4). The Zr/(Zr + Ti) ratio was
further increased to 0.5 by modifying the sequence of the
discrete-source gas pulses. A polarization-voltage
hysteresis loop was observed for a 70 nm thick PZT film
deposited on a planar substrate after postannealing for
crystallization. To assess the feasibility of ALD as a tool
for coating three-dimensional (3D) structures uniformly, PZT
films were deposited on submicrometer 3D structures.
As-deposited amorphous PZT films as well as crystallized PZT
films were both free of any gradient in the cation
composition over the structure. The present work reports
interesting interactions on stacking different binary-oxide
layers by ALD and demonstrates why the multiprecursor ALD
process is a promising approach for uniformly coating 3D
nanostructures with complex oxide materials. (C) 2008 The
Electrochemical Society.},
keywords = {J (WoSType)},
cin = {IFF-6 / JARA-FIT},
ddc = {540},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Electrochemistry / Materials Science, Coatings $\&$ Films},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000259528200045},
doi = {10.1149/1.2977717},
url = {https://juser.fz-juelich.de/record/543},
}