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@ARTICLE{Watanabe:543,
      author       = {Watanabe, T. and Hoffmann-Eifert, S. and Hwang, C. S. and
                      Waser, R.},
      title        = {{G}rowth behavior of atomic-layer-deposited
                      {P}b({Z}r,{T}i){O}x thin films on planar substrate and
                      three-dimensional hole structures},
      journal      = {Journal of the Electrochemical Society},
      volume       = {155},
      issn         = {0013-4651},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society},
      reportid     = {PreJuSER-543},
      pages        = {D715},
      year         = {2008},
      note         = {The authors thank Dr. A. Besmehn (ZCH, FZJ) for XPS
                      analysis, W. Krumpen (ZCH, FZJ) for XRF analysis, M. Gebauer
                      and M. Gerst (IFF-IEM, FZJ) for their technical support, D.
                      Esser and Dr. H.- J. Penkalla (IEF-2, FZJ) for FIB lamellae
                      preparation, F. Dorn and Dr. T. Weirich (GFE, RWTH Aachen)
                      for STEM and HRTEM analysis, and L. Cattaneo, S. Carella
                      (SAES Getters S. p. A), and Dr. Y. Tasaki (Toshima MfG Co.,
                      Ltd.) for fruitful discussions. SAES Getters S. p. A is
                      gratefully acknowledged for supplying the precursors. The 3D
                      substrates were kindly provided by Samsung Advanced
                      Institute of Technology. T. W. also extends thanks to the
                      Alexander von Humboldt Stiftung (AvH) for awarding him a
                      research fellowship. This collaboration with CSH was
                      supported by AvH.},
      abstract     = {Quaternary Pb(Zr, Ti)O-x (PZT) films were deposited at 240
                      degrees C by a combination of liquid-injection atomic layer
                      deposition (ALD) of binary PbO, TiOx, and ZrOx thin films.
                      In preliminary work, binary ZrOx films were deposited at 240
                      degrees C by ALD. Two solutions of Zr(C9H15O2)(4)
                      [Zr(DIBM)(4)] and Zr(C11H19O2)(4) [Zr(DPM)(4)] dissolved in
                      ethylcyclohexane (ECH) were prepared, and it was found that
                      the Zr(DIBM)(4) solution provides a three-times-higher
                      deposition rate for the ZrOx films than the Zr(DPM)(4)
                      solution. We focused the study on the set of precursors
                      which offers the highest degree of flexibility for adjusting
                      the Zr/(Zr + Ti) ratio in the PZT films: Pb(C11H19O2)(2)
                      [Pb(DPM)(2)], Ti[OCH(CH3)(2)](4) [Ti(Oi-Pr)(4)], and
                      Zr(DIBM)(4) dissolved in ECH, and water as the oxidant. This
                      set of solutions contributed to increasing the Zr/(Zr + Ti)
                      ratio in the deposited PZT films to more than 0.2, which
                      remained below 0.1 in the ALD-PZT using Pb(DPM)(2),
                      Ti(Oi-Pr)(4), and Zr(DPM)(4). The Zr/(Zr + Ti) ratio was
                      further increased to 0.5 by modifying the sequence of the
                      discrete-source gas pulses. A polarization-voltage
                      hysteresis loop was observed for a 70 nm thick PZT film
                      deposited on a planar substrate after postannealing for
                      crystallization. To assess the feasibility of ALD as a tool
                      for coating three-dimensional (3D) structures uniformly, PZT
                      films were deposited on submicrometer 3D structures.
                      As-deposited amorphous PZT films as well as crystallized PZT
                      films were both free of any gradient in the cation
                      composition over the structure. The present work reports
                      interesting interactions on stacking different binary-oxide
                      layers by ALD and demonstrates why the multiprecursor ALD
                      process is a promising approach for uniformly coating 3D
                      nanostructures with complex oxide materials. (C) 2008 The
                      Electrochemical Society.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000259528200045},
      doi          = {10.1149/1.2977717},
      url          = {https://juser.fz-juelich.de/record/543},
}