Home > Publications database > Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD
 
Contribution to a conference proceedings/Contribution to a book PreJuSER-55231
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Electronic properties of low temperature microcrystalline silicon carbide prepared by Hot Wire CVD

 ;  ;  ;  ;

2006

4th International Conference on Hot-Wire CVD (Cat-CVD) Process, October 3.-8.2006, Takayama, Japan : Extended Abstracts. - 2006. - S. 57 - 59


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Photovoltaik (IPV)
Research Program(s):
  1. Erneuerbare Energien (P11)

Appears in the scientific report 2006
Notes: Proceedings
Click to display QR Code for this record

The record appears in these collections:
Document types > Presentations > Conference Presentations
Institute Collections > IMD > IMD-3
Document types > Books > Books
Workflow collections > Public records
IEK > IEK-5
Publications database
 Record created 2012-11-13, last modified 2024-07-08
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2510-2-gd5e4e3e
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English