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000055302 0247_ $$2DOI$$a10.1016/j.tsf.2005.12.167
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000055302 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000055302 084__ $$2WoS$$aMaterials Science, Coatings & Films
000055302 084__ $$2WoS$$aPhysics, Applied
000055302 084__ $$2WoS$$aPhysics, Condensed Matter
000055302 1001_ $$0P:(DE-Juel1)VDB58523$$avan den Donker, M. N.$$b0$$uFZJ
000055302 245__ $$aThe role of plasma induced substrate heating during high rate deposition of microcrystalline silicon solar cells
000055302 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000055302 300__ $$a562 - 566
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000055302 440_0 $$05762$$aThin Solid Films$$v511-512$$x0040-6090
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000055302 520__ $$aA 13.56 MHz parallel plate hydrogen-diluted silane plasma, operated at high pressure and high power, was used to deposit microcrystalline silicon solar cells with efficiencies of 6-9% at high deposition rates of 0.4-1.2 nm/s. In this regime new challenges arise regarding temperature control, since the high plasma power causes the substrate to heat up significantly during film deposition. We investigated this effect of plasma-induced substrate heating experimentally by means of pyrometric substrate temperature measurements and spectroscopic gas temperature measurements. The substrate temperature was observed to increase by up to 100 K during film deposition, depending on power density and deposition time. Performance of deposited solar cells decreased whenever the plasma induced heating caused a drift outside the ideal temperature window, of around 475 K (similar to 206 degrees C). Further analysis related this decrease in performance to the substrate temperature's influence on film crystallinity and open circuit voltage. (c) 2005 Elsevier B.V. All rights reserved.
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000055302 65320 $$2Author$$asilane
000055302 65320 $$2Author$$ahydrogen
000055302 65320 $$2Author$$asilicon
000055302 65320 $$2Author$$asolar cells
000055302 65320 $$2Author$$aplasma processing and deposition
000055302 65320 $$2Author$$aRaman scattering
000055302 7001_ $$0P:(DE-Juel1)VDB3113$$aSchmitz, R.$$b1$$uFZJ
000055302 7001_ $$0P:(DE-Juel1)VDB5983$$aAppenzeller, W.$$b2$$uFZJ
000055302 7001_ $$0P:(DE-Juel1)VDB5941$$aRech, B.$$b3$$uFZJ
000055302 7001_ $$0P:(DE-HGF)0$$aKessels, W. M. M.$$b4
000055302 7001_ $$0P:(DE-HGF)0$$avan de Sanden, M. C. M.$$b5
000055302 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2005.12.167$$gVol. 511-512, p. 562 - 566$$p562 - 566$$q511-512<562 - 566$$tThin solid films$$v511-512$$x0040-6090$$y2006
000055302 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2005.12.167
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000055302 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000055302 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
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