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@ARTICLE{vandenDonker:55302,
      author       = {van den Donker, M. N. and Schmitz, R. and Appenzeller, W.
                      and Rech, B. and Kessels, W. M. M. and van de Sanden, M. C.
                      M.},
      title        = {{T}he role of plasma induced substrate heating during high
                      rate deposition of microcrystalline silicon solar cells},
      journal      = {Thin solid films},
      volume       = {511-512},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-55302},
      pages        = {562 - 566},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A 13.56 MHz parallel plate hydrogen-diluted silane plasma,
                      operated at high pressure and high power, was used to
                      deposit microcrystalline silicon solar cells with
                      efficiencies of $6-9\%$ at high deposition rates of 0.4-1.2
                      nm/s. In this regime new challenges arise regarding
                      temperature control, since the high plasma power causes the
                      substrate to heat up significantly during film deposition.
                      We investigated this effect of plasma-induced substrate
                      heating experimentally by means of pyrometric substrate
                      temperature measurements and spectroscopic gas temperature
                      measurements. The substrate temperature was observed to
                      increase by up to 100 K during film deposition, depending on
                      power density and deposition time. Performance of deposited
                      solar cells decreased whenever the plasma induced heating
                      caused a drift outside the ideal temperature window, of
                      around 475 K (similar to 206 degrees C). Further analysis
                      related this decrease in performance to the substrate
                      temperature's influence on film crystallinity and open
                      circuit voltage. (c) 2005 Elsevier B.V. All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {IPV},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB46},
      pnm          = {Erneuerbare Energien},
      pid          = {G:(DE-Juel1)FUEK401},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000238249000112},
      doi          = {10.1016/j.tsf.2005.12.167},
      url          = {https://juser.fz-juelich.de/record/55302},
}