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000055336 0247_ $$2DOI$$a10.1016/j.tsf.2005.12.114
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000055336 041__ $$aeng
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000055336 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000055336 084__ $$2WoS$$aMaterials Science, Coatings & Films
000055336 084__ $$2WoS$$aPhysics, Applied
000055336 084__ $$2WoS$$aPhysics, Condensed Matter
000055336 1001_ $$0P:(DE-Juel1)VDB14656$$aMerdzhanova, T.$$b0$$uFZJ
000055336 245__ $$aDefect states in microcrystalline silicon probed by photoluminescence spectroscopy
000055336 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2006
000055336 300__ $$a394 - 398
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000055336 440_0 $$05762$$aThin Solid Films$$v511-512$$x0040-6090
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000055336 520__ $$aPhotoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (mu c-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T-S), which influences mainly the defect density, and silane concentration (SC), as the key parameter to control the microstructure of the material were varied. In high quality mu c-Si:H films (T-S= 185-200 degrees C) a PL band ('mu c'-Si-band) is observed at similar to 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In mu c-Si:H films prepared at higher T-S (> 300 degrees C), an additional PL band at similar to 0.7 eV with a width of similar to 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at similar to 0.7 eV with increasing SC in contrast to the observed shift of the 'mu c'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'mu c'-Si-band shifts to lower energies, (ii) a much weaker quenching for the 0.7 eV band compared to the 'mu c'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in mu c-Si:H is assigned tentatively to defect-related transitions in the crystalline phase. (c) 2005 Elsevier B.V All rights reserved.
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000055336 65320 $$2Author$$aphotoluminescence
000055336 65320 $$2Author$$adefect states
000055336 65320 $$2Author$$asilicon
000055336 65320 $$2Author$$atemperature-dependent measurements
000055336 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b1$$uFZJ
000055336 7001_ $$0P:(DE-Juel1)VDB5924$$aKlein, S.$$b2$$uFZJ
000055336 7001_ $$0P:(DE-Juel1)130238$$aFinger, F.$$b3$$uFZJ
000055336 7001_ $$0P:(DE-HGF)0$$aDimova-Malinovska, D.$$b4
000055336 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2005.12.114$$gVol. 511-512, p. 394 - 398$$p394 - 398$$q511-512<394 - 398$$tThin solid films$$v511-512$$x0040-6090$$y2006
000055336 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2005.12.114
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000055336 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000055336 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
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