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@ARTICLE{Merdzhanova:55336,
      author       = {Merdzhanova, T. and Carius, R. and Klein, S. and Finger, F.
                      and Dimova-Malinovska, D.},
      title        = {{D}efect states in microcrystalline silicon probed by
                      photoluminescence spectroscopy},
      journal      = {Thin solid films},
      volume       = {511-512},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-55336},
      pages        = {394 - 398},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Photoluminescence (PL) spectroscopy is used to investigate
                      defects and localized band tail states within the band gap
                      of hydrogenated microcrystalline silicon (mu c-Si:H)
                      prepared by plasma enhanced chemical vapor deposition
                      (PECVD) and hot wire chemical vapor deposition (HWCVD). The
                      effect of the substrate temperature (T-S), which influences
                      mainly the defect density, and silane concentration (SC), as
                      the key parameter to control the microstructure of the
                      material were varied. In high quality mu c-Si:H films (T-S=
                      185-200 degrees C) a PL band ('mu c'-Si-band) is observed at
                      similar to 0.9-1.05 eV which is attributed to radiative
                      recombination via localized band tail states in the
                      microcrystalline phase. In mu c-Si:H films prepared at
                      higher T-S (> 300 degrees C), an additional PL band at
                      similar to 0.7 eV with a width of similar to 0.17 eV is
                      found for both PECVD and HWCVD material. This band maintains
                      its position at similar to 0.7 eV with increasing SC in
                      contrast to the observed shift of the 'mu c'-Si-band to
                      higher energies. Studies of the temperature dependences of
                      the PL peak energy and intensity for the two bands show: (i)
                      the PL band at 0.7 eV remains unaffected upon increasing
                      temperature, while the 'mu c'-Si-band shifts to lower
                      energies, (ii) a much weaker quenching for the 0.7 eV band
                      compared to the 'mu c'-Si-band. It was also found that the
                      PL band at 0.7 eV exhibits a slightly stronger temperature
                      dependence of the PL intensity compared to 'defect' band at
                      0.9 eV in a-Si:H suggesting similar recombination transition
                      via deeper trap states. Due to a similar PL properties of
                      the emission band previously observed in Czochralski-grown
                      silicon (Cz-Si), the 0.7 eV band in mu c-Si:H is assigned
                      tentatively to defect-related transitions in the crystalline
                      phase. (c) 2005 Elsevier B.V All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IPV / JARA-ENERGY},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB46 / $I:(DE-82)080011_20140620$},
      pnm          = {Erneuerbare Energien},
      pid          = {G:(DE-Juel1)FUEK401},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000238249000080},
      doi          = {10.1016/j.tsf.2005.12.114},
      url          = {https://juser.fz-juelich.de/record/55336},
}