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@ARTICLE{Watanabe:55458,
      author       = {Watanabe, T. and Hoffmann-Eifert, S. and Mi, S. and Jia, C.
                      and Waser, R.},
      title        = {{G}rowth of ternary {P}b{T}i{O}x films in a combination of
                      binary oxide atomic layer depositions},
      journal      = {Journal of applied physics},
      volume       = {101},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-55458},
      pages        = {014114},
      year         = {2007},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Ternary PbTiOx films were deposited at 240 degrees C on
                      Pt-covered Si substrates using a combination of liquid
                      injection atomic layer depositions of binary TiOx and PbO
                      films. Ti(OC3H7)(2)(C11H19O2)(2) [Ti(Oi-Pr)(2)(DPM)(2)] and
                      Pb(C11H19O2)(2) [Pb(DPM)(2)] dissolved in ethylcyclohexane
                      and H2O were used as source materials. The deposition rates
                      of Pb and Ti were enhanced in the ternary process compared
                      to their binary processes under comparable deposition
                      conditions. The Pb/Ti ratio of PbTiOx films saturated with
                      an increase in Ti precursor input, while it continued to
                      increase with an increasing Pb precursor input. The
                      self-regulated growth nature of the Pb-O layer in the binary
                      film growth was lost in the mixed PbTiOx process as a result
                      of interaction with the predeposited Ti-O layer. It was
                      confirmed that for the PbTiOx film to grow on Pt substrates,
                      an initial incubation period is required. Both Pb-O and Ti-O
                      layers shared a common incubation period of up to ten
                      sequences. The incubation period was shortened by increasing
                      the input of Pb precursor. It was independent of the input
                      of the Ti precursor and the order of precursor supply. This
                      variable incubation period was considered as a potential key
                      issue for growing stoichiometric and uniform multicomponent
                      films over three-dimensional (3D) structures. The order of
                      precursor supply affected the effective deposition rate
                      after the incubation period. A sequence starting with a Ti
                      precursor injection showed a higher growth rate than a
                      sequence that started with a Pb precursor supply. A PbTiOx
                      film was deposited on a 3D substrate precoated with an Ir
                      layer to demonstrate the uniformity in film thickness and
                      cation composition. Although the present PbTiOx process does
                      not have an ideal wide-process window in the cation
                      composition, the PbTiOx film showed uniform coverage and the
                      distribution of cation composition over the hole structure
                      was within +/- $10\%.$ (c) 2007 American Institute of
                      Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / CNI / IFF-8 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / I:(DE-Juel1)VDB381 /
                      I:(DE-Juel1)VDB788 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000243585200080},
      doi          = {10.1063/1.2422777},
      url          = {https://juser.fz-juelich.de/record/55458},
}