TY  - JOUR
AU  - Sekiguchi, T.
AU  - Yoshida, S.
AU  - Itoh, K. M.
AU  - Myslivecek, J.
AU  - Voigtländer, B.
TI  - One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
JO  - Applied physics letters
VL  - 90
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-55509
SP  - 013108
PY  - 2007
N1  - Record converted from VDB: 12.11.2012
AB  - Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degrees C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7 x 7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. (c) 2007 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000243379900085
DO  - DOI:10.1063/1.2426890
UR  - https://juser.fz-juelich.de/record/55509
ER  -