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@ARTICLE{Sekiguchi:55509,
author = {Sekiguchi, T. and Yoshida, S. and Itoh, K. M. and
Myslivecek, J. and Voigtländer, B.},
title = {{O}ne-dimensional ordering of {G}e nanoclusters along
atomically straight steps of {S}i(111)},
journal = {Applied physics letters},
volume = {90},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-55509},
pages = {013108},
year = {2007},
note = {Record converted from VDB: 12.11.2012},
abstract = {Ge nanostructures grown by molecular beam epitaxy on a
vicinal Si(111) surface with atomically well-defined steps
are studied by means of scanning tunneling microscopy and
spectroscopy. When the substrate temperature during
deposition is around 250 degrees C, Ge nanoclusters of
diameters less than 2.0 nm form a one-dimensional array of
the periodicity 2.7 nm along each step. This
self-organization is due to preferential nucleation of Ge on
the unfaulted 7 x 7 half-unit cells at the upper step edges.
Scanning tunneling spectroscopy reveals localized electronic
states of the nanoclusters. (c) 2007 American Institute of
Physics.},
keywords = {J (WoSType)},
cin = {IBN-3 / CNI / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB801 / I:(DE-Juel1)VDB381 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000243379900085},
doi = {10.1063/1.2426890},
url = {https://juser.fz-juelich.de/record/55509},
}