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024 7 _ |a 10.1063/1.2426890
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100 1 _ |a Sekiguchi, T.
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245 _ _ |a One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2007
300 _ _ |a 013108
336 7 _ |a Journal Article
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440 _ 0 |a Applied Physics Letters
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500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Ge nanostructures grown by molecular beam epitaxy on a vicinal Si(111) surface with atomically well-defined steps are studied by means of scanning tunneling microscopy and spectroscopy. When the substrate temperature during deposition is around 250 degrees C, Ge nanoclusters of diameters less than 2.0 nm form a one-dimensional array of the periodicity 2.7 nm along each step. This self-organization is due to preferential nucleation of Ge on the unfaulted 7 x 7 half-unit cells at the upper step edges. Scanning tunneling spectroscopy reveals localized electronic states of the nanoclusters. (c) 2007 American Institute of Physics.
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700 1 _ |a Yoshida, S.
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700 1 _ |a Itoh, K. M.
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700 1 _ |a Myslivecek, J.
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700 1 _ |a Voigtländer, B.
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