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000056023 084__ $$2WoS$$aPhysics, Applied
000056023 1001_ $$0P:(DE-HGF)0$$aWesterwaal, R. J.$$b0
000056023 245__ $$aOptical, structural, and electrical properties of Mg2NiH4 thin films in situ grown by activated reactive evaporation
000056023 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2006
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000056023 520__ $$aMg2NiH4 thin films have been prepared by activated reactive evaporation in a molecular beam epitaxy system equipped with an atomic hydrogen source. The optical reflection spectra and the resistivity of the films are measured in situ during deposition. In situ grown Mg2NiH4 appears to be stable in vacuum due to the fact that the dehydrogenation of the Mg2NiH4 phase is kinetically blocked. Hydrogen desorption only takes place when a Pd cap layer is added. The optical band gap of the in situ deposited Mg2NiH4 hydride, 1.75 eV, is in good agreement with that of Mg2NiH4 which has been formed ex situ by hydrogenation of metallic Pd capped Mg2Ni films. The microstructure of these in situ grown films is characterized by a homogeneous layer with very small grain sizes. This microstructure suppresses the preferred hydride nucleation at the film/substrate interface which was found in as-grown Mg2Ni thin films that are hydrogenated after deposition. (c) 2006 American Institute of Physics.
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000056023 7001_ $$0P:(DE-HGF)0$$aGriessen, R.$$b5
000056023 7001_ $$0P:(DE-HGF)0$$aBorgschulte, A.$$b6
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000056023 7001_ $$0P:(DE-Juel1)VDB66687$$aFleischhauer, H. P.$$b11$$uFZJ
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