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@ARTICLE{Westerwaal:56023,
      author       = {Westerwaal, R. J. and Slaman, M. and Broedersz, C. P. and
                      Borsa, D. M. and Dam, B. and Griessen, R. and Borgschulte,
                      A. and Lohstroh, W. and Kooi, B. and ten Brink, G. and
                      Tschersich, K. G. and Fleischhauer, H. P.},
      title        = {{O}ptical, structural, and electrical properties of
                      {M}g2{N}i{H}4 thin films in situ grown by activated reactive
                      evaporation},
      journal      = {Journal of applied physics},
      volume       = {100},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-56023},
      pages        = {063518},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Mg2NiH4 thin films have been prepared by activated reactive
                      evaporation in a molecular beam epitaxy system equipped with
                      an atomic hydrogen source. The optical reflection spectra
                      and the resistivity of the films are measured in situ during
                      deposition. In situ grown Mg2NiH4 appears to be stable in
                      vacuum due to the fact that the dehydrogenation of the
                      Mg2NiH4 phase is kinetically blocked. Hydrogen desorption
                      only takes place when a Pd cap layer is added. The optical
                      band gap of the in situ deposited Mg2NiH4 hydride, 1.75 eV,
                      is in good agreement with that of Mg2NiH4 which has been
                      formed ex situ by hydrogenation of metallic Pd capped Mg2Ni
                      films. The microstructure of these in situ grown films is
                      characterized by a homogeneous layer with very small grain
                      sizes. This microstructure suppresses the preferred hydride
                      nucleation at the film/substrate interface which was found
                      in as-grown Mg2Ni thin films that are hydrogenated after
                      deposition. (c) 2006 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {ISG-4},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB421},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK414},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000240876600037},
      doi          = {10.1063/1.2349473},
      url          = {https://juser.fz-juelich.de/record/56023},
}